Semiconductor memory device and i/o control circuit therefor

ABSTRACT

An I/O control circuit, includes a mode setting unit configured to generate a first mode signal, a second mode signal, a third mode signal, and a fourth mode signal in accordance with one of a plurality of I/O option modes, a first control signal generation unit configured to generate a first mode determination signal and a first control signal enable signal in response to the first I/O option signal and the first mode signal, and a second control signal generation unit configured to generate a second control signal enable signal, a third control signal enable signal, and a fourth control signal enable signal in response to a second I/O option signal, the first mode determination signal, the second mode signal, the third mode signal, and the fourth mode signal.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is a divisional application of U.S. applicationSer. No. 14/195,572, filed on Mar. 3, 2014, and the present applicationclaims priority under 35 U.S.C. §119(a) to Korean application number10-2013-0147085, filed on Nov. 29, 2013, in the Korean IntellectualProperty Office, which is incorporated herein by reference in itsentirety.

BACKGROUND

1. Technical Field

Various embodiments relate to a semiconductor integrated device, andmore particularly, to a semiconductor memory device and an I/O controlcircuit.

2. Related Art

A semiconductor memory device can typically be placed in one of a numberof different input/output (I/O) option modes, where each I/O option modesupports an associated data I/O bandwidth. The data I/O bandwidthdefines the amount of data that can be inputted in response to a writecommand and/or outputted in response to a read command. Examples of I/Ooption modes may include a X4 I/O option mode, a X8 I/O option mode, anda X16 I/O option mode.

When the semiconductor memory device is placed in a specific I/O optionmode, one or more different control functions that are associated withthat I/O option mode are enabled. Examples of such control functionsinclude, but are not limited to, a data masking control function (WDM),a data bus inversion control function (DBI), and a termination datastrobe control function (TDQS). There are two types of DBI controlfunctions: a write DBI control function (WDBI) function and a read DBIcontrol function (RDBI).

In some cases, when a semiconductor memory device operates in aparticular I/O option mode, a control function that is not associatedwith that I/O option mode may be inadvertently enabled in error.

SUMMARY

In an embodiment, an I/O control circuit may include a mode setting unitconfigured to generate a first mode signal, a second mode signal, athird mode signal, and a fourth mode signal in accordance with one of aplurality of I/O option modes, a first control signal generation unitconfigured to generate a first mode determination signal and a firstcontrol signal enable signal in response to the first I/O option signaland the first mode signal, and a second control signal generation unitconfigured to generate a second control signal enable signal, a thirdcontrol signal enable signal, and a fourth control signal enable signalin response to a second I/O option signal, the first mode determinationsignal, the second mode signal, the third mode signal, and the fourthmode signal.

In an embodiment, a semiconductor memory device may include a modecontrol unit configured to generate an output signal in response to afirst control signal enable signal, a second control signal enablesignal, a third control signal enable signal, a fourth control signalenable signal, and a buffer enable signal received from an I/O controlcircuit, a pad unit configured to include an I/O mode control pad, adata I/O pad, and a data I/O strobe pad, an input driving unit driven inresponse to the output signal of the mode control unit and electricallycoupled to the pad unit, an output driving unit driven in response tothe output signal of the mode control unit and electrically coupled tothe pad unit, and an I/O conversion unit configured to provide a memoryregion with data received from the input driving unit and provide theoutput driving unit with data received from the memory region inresponse to the fourth control signal enable signal.

In an embodiment, a semiconductor memory device may include a first modecontrol unit configured to generate an output signal in response to afirst control signal enable signal, a second control signal enablesignal, a third control signal enable signal, a fourth control signalenable signal, a buffer enable signal, a first I/O option signal, and asecond I/O option signal received from the I/O control circuit, a padunit configured to include an I/O mode control pad, a data I/O pad, anda data I/O strobe pad, an input driving unit driven in response to theoutput signal of the first mode control unit and electrically coupled tothe pad unit, an output driving unit driven in response to the outputsignal of the first mode control unit and electrically coupled to thepad unit, and an I/O conversion unit configured to provide a memoryregion with data received from the input driving unit and provide theoutput driving unit with data received from the memory region inresponse to a fourth control signal enable signal.

In an embodiment, a system includes a memory controller including an I/Ocontrol circuit and a semiconductor memory device. The I/O controlcircuit may include a mode setting unit configured to generate a firstmode signal, a second mode signal, a third mode signal, and a fourthmode signal in accordance with one of a plurality of I/O option modes, afirst control signal generation unit configured to generate a first modedetermination signal and a first control signal enable signal inresponse to the first I/O option signal and the first mode signal, and asecond control signal generation unit configured to generate a secondcontrol signal enable signal, a third control signal enable signal, anda fourth control signal enable signal in response to a second I/O optionsignal, the first mode determination signal, the second mode signal, thethird mode signal, and the fourth mode signal. The semiconductor memorydevice may include a mode control unit configured to generate an outputsignal in response to a first control signal enable signal, a secondcontrol signal enable signal, a third control signal enable signal, afourth control signal enable signal, and a buffer enable signal receivedfrom an I/O control circuit, a pad unit configured to include an I/Omode control pad, a data I/O pad, and a data I/O strobe pad, an inputdriving unit driven in response to the output signal of the mode controlunit and electrically coupled to the pad unit, an output driving unitdriven in response to the output signal of the mode control unit andelectrically coupled to the pad unit, and an I/O conversion unitconfigured to provide a memory region with data received from the inputdriving unit and provide the output driving unit with data received fromthe memory region in response to the fourth control signal enablesignal.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram illustrating an embodiment of an I/O control circuitof a semiconductor memory device;

FIG. 2 is a diagram of the I/O control circuit shown in FIG. 1;

FIG. 3 shows the construction of an embodiment of a semiconductor memorydevice;

FIG. 4 is a diagram of an example of the first mode control circuitshown in FIG. 3;

FIG. 5 is a diagram of an example of the second mode control circuitshown in FIG. 3;

FIG. 6 shows the construction of an embodiment of a semiconductor memorydevice;

FIG. 7 is a diagram of an example of the first mode control circuitshown in FIG. 6;

FIG. 8 is a diagram of an example of the second mode control circuitshown in FIG. 6; and

FIG. 9 is a block diagram representation of a system including anembodiment of a semiconductor memory device and an embodiment of an I/Ocontrol circuit.

DETAILED DESCRIPTION

Various embodiments of a semiconductor memory device and of an I/Ocontrol circuit will be described below with reference to theaccompanying drawings. In an embodiment, a I/O control circuit may beused to place a semiconductor memory device in one of a number ofdifferent I/O option modes. Each I/O option mode supports an associateddata I/O bandwidth. Examples of such I/O option modes include, but arenot limited to, a X4 I/O option mode, a X8 I/O option mode and a X16 I/Ooption mode. In an embodiment, the I/O control circuit in disposed in amemory controller. In an embodiment, the I/O control circuit is disposedin a semiconductor memory device.

Each of the I/O option modes supports one or more different controlfunctions in accordance with a control function priority scheme.Examples of such control functions include, but are not limited to, adata masking control function (also referred to as a WDM controlfunction), a data bus inversion control function (also referred to as aDBI control function) and a termination data strobe control function(also referred to as a DBI control function). There are two types of DBIcontrol functions: a write DBI control function (also referred to as aWDBI control function) and a read DBI control function (also referred toas a RDBI control function).

Table 1 details an example of a relationship between the different I/Ooption modes and the control functions. More specifically, Table 1 showsthe control functions supported by each of the X4, X8 and X16 I/O optionmodes

TABLE 1 TDQS WDM WDBI RDBI X4 Not supported Not supported Not supportedNot supported X8 Supported Supported Supported Supported X16 Notsupported Supported Supported Supported

When the semiconductor memory device is placed in the X4 I/O optionmode, the TDQS control function, the WDM control function, the WDBIcontrol function and the RDBI control function are not supported. Whenthe semiconductor memory device is placed in the X8 I/O option mode, theTDQS control function, the WDM control function, the WDBI controlfunction and the RDBI control function are all supported. When thesemiconductor memory device is placed in the X16 I/O option mode, theTDQS control function is not supported while the WDM control function,the WDBI control function and the RDBI control function are supported.

The TDQS function is only supported in the X8 I/O option mode. The DBIcontrol functions (i.e. the WDBI control function and the RDBI controlfunction) are only supported in the X8 I/O option mode and the X16 I/Ooption mode.

Table 2 details the priorities for the different I/O control functions.

TABLE 2 TDQS WDM WDBI RDBI Operation Enable Don't care Don't care Don'tcare TDQS Disable Enable Don't care Enable WDM, RDBI Disable WDM DisableEnable Enable WDBI, RDBI Disable WDBI Disable Enable RDBI Disable —

Based on the priority scheme detailed in Table 2, the WDM controlfunction, the WDBI control function, and the RDBI control function aredisabled when the TDQS function is enabled. When the WDM controlfunction is enabled, the RDBI control function may be enabled. At leastone of the WDBI control function and the RDBI control function may besupported without the WDM function depending on whether the WDM functionis enabled or not when the TDQS function is disabled.

FIG. 1 is a diagram illustrating an embodiment of an I/O control circuit200 of a semiconductor memory device.

The I/O control circuit 200 may include a mode setting unit 210, a firstcontrol signal generation unit 220, and a second control signalgeneration unit 230.

The mode setting unit 210 generates a first mode signal TDQS, a secondmode signal WDM, a third mode signal WDBI and a fourth mode signal RDBIin response to an address signal A[ ] and a mode setting strobe signalEMRSP. In an embodiment, the first, second, third and fourth modesignals TDQS, WDM, WDBI, RDBI may be generated by a mode register set inaccordance with an I/O option mode.

The first control signal generation unit 220 generates a first modedetermination signal MOD1_DEC and a first control signal enable signalTDQS_EN in response to a first I/O option signal MOD1 and a first modesignal TDQS

The first control signal generation unit 220 may include a first modedetermination unit 221 and a first mode selection unit 222.

The first mode determination unit 221 generates the first modedetermination signal MOD1_DEC in response to the first I/O option signalMOD1 and the first mode signal TDQS. The first mode selection unit 222generates the first control signal enable signal TDQS_EN in response tothe first mode determination signal MOD1_DEC. The first mode selectionunit 222 activates the first control signal enable signal TDQS_EN whenthe first I/O option signal MOD1 is enabled.

The second control signal generation unit 230 generates a second controlsignal enable signal WDM_EN, a third control signal enable signalWDBI_EN, and a fourth control signal enable signal RDBI_EN in responseto a second I/O option signal MOD2, the first mode determination signalMOD1_DEC, and the second, third and fourth mode signals WDM, WDBI, RDBI.The first mode determination signal MOD1_DEC is received at the secondcontrol signal generation unit 230 from the first control signalgeneration unit 220.

The second control signal generation unit 230 may include a second modedetermination unit 231, a second mode selection unit 232, a third modedetermination unit 233, a third mode selection unit 234, and a fourthmode selection unit 235.

The second mode determination unit 231 generates a second modedetermination signal MOD2_DEC in response to the second I/O optionsignal MOD2.

The second mode selection unit 232 generates the second control signalenable signal WDM_EN in response to the first mode determination signalMOD1_DEC, the second mode determination signal MOD2_DEC, and the secondmode signal WDM. The second mode selection unit 232 disables the secondcontrol enable signal WDM_EN when the second I/O option signal MOD2 isenabled.

The third mode determination unit 233 generates a third modedetermination signal MOD3_DEC in response to the second I/O optionsignal MOD2 and the second control signal enable signal WDM_EN.

The third mode selection unit 234 generates the third control signalenable signal WDBI_EN in response to the first mode determination signalMOD1_DEC, the third mode determination signal MOD3_DEC, and the thirdmode signal WDBI. The third mode selection unit 234 disables the thirdcontrol signal enable signal WDBI_EN when the second I/O option signalMOD2 is enabled. The third mode selection unit 234 activates the thirdcontrol signal enable signal WDBI_EN based on the activation state ofthe second control signal enable signal WDM_EN when the second I/Ooption signal MOD2 is disabled and the activation state of the firstcontrol signal enable signal TDQS_EN when the first I/O option signalMOD1 is enabled.

The fourth mode selection unit 235 generates the fourth control signalenable signal RDBI_EN in response to the first mode determination signalMOD1_DEC, the second mode determination signal MOD2_DEC, and the fourthmode signal RDBI. The fourth mode selection unit 235 disables the fourthcontrol signal enable signal RDBI_EN when the second I/O option signalMOD2 is enabled. The fourth mode selection unit 235 activates the fourthcontrol signal enable signal RDBI_EN based on the activation state ofthe first control signal enable signal TDQS_EN when the first I/O optionsignal MOD1 is enabled.

The first I/O option signal MOD1 may be a signal that places thesemiconductor memory device in the X8 I/O option mode. The second I/Ooption signal MOD2 may be a signal that places the semiconductor memorydevice in the X4 I/O option mode.

The first mode signal TDQS is a signal that determines whether thesemiconductor memory device will support a TDQS control function. Thesecond mode signal WDM is a signal that determines whether thesemiconductor memory device will perform the data masking controlfunction WDM when a write operation is performed. The third mode signalWDBI is a signal that enables the semiconductor memory device to performthe data inversion/non-inversion control function WDBI when a writeoperation is performed. The fourth mode signal RDBI is a signal thatenables the semiconductor memory device to perform the datainversion/non-inversion control function RDBI when a read operation isperformed.

The priority order of the control functions performed by thesemiconductor memory device is assigned as follows: TDQS controlfunction, WDM control function, WDBI control function, and RDBI controlfunction. The TDQS control function is supported in the first I/O optionmode. The first I/O option mode is the X8 I/O option mode. The TDQScontrol function is not supported in the X4 I/O option mode and the X16I/O option mode. Accordingly, the first control signal generation unit220 generates the first control signal enable signal TDQS_EN in responseto the first I/O option signal MOD1. The generation of the first controlsignal enable signal TDQS_EN does not depend on the other mode signalsWDM, WDBI, and RDBI.

The WDM, WDBI, and RDBI control functions are selectively activated whenthe TDQS control function is deactivated. The WDM, WDBI, and RDBIcontrol functions are not supported in the second I/O option mode. Thesecond I/O option mode is the X4 I/O option mode. The WDM, WDBI, andRDBI control functions are supported in the X8 I/O option mode and inthe X16 I/O option mode. The RDBI control function may be supported whenthe WDM control function is activated. The WDBI control function may besupported when the WDM control function is deactivated. The RDBI controlfunction may be supported when the WDM control function is deactivated.Both the WDBI control function and the RDBI control function may besupported when the WDM control function is deactivated.

The activation of the second control signal enable signal WDM_EN isbased on the second I/O option signal MOD2 and the first control signalenable signal TDQS_EN.

The activation of the third control signal enable signal WDBI_EN isbased on the second I/O option signal MOD2 and the second control signalenable signal WDM_EN.

The activation of the fourth control signal enable signal RDBI_EN isbased on the second I/O option signal MOD2 and the second control signalenable signal WDM_EN.

FIG. 2 is a diagram of an example of the I/O control circuit shown inFIG. 1.

An embodiment of the I/O control circuit 200-1 may include a modesetting unit 210, a first control signal generation unit 220, and asecond control signal generation unit 230.

The mode setting unit 210 may include a first mode setting circuit 211,a second mode setting circuit 212, a third mode setting circuit 213 anda fourth mode setting circuit 214.

The first mode setting circuit 211 generates a first mode signal TDQS inresponse to a first address signal A[11]_1 and a first mode settingstrobe signal EMRS1P. The second mode setting circuit 212 generates asecond mode signal WDM in response to a second address signal A[10] anda second mode setting strobe signal EMRS5P. The third mode settingcircuit 213 generates a third mode signal WDBI in response to a thirdaddress signal A[11]_2 and the second mode setting strobe signal EMRS5P.The fourth mode setting circuit 214 generates a fourth mode signal RDBIin response to a fourth address signal A[12] and the second mode settingstrobe signal EMRS5P.

The first address signal A[11]_1 is an address signal of a first moderegister that provides the first mode setting strobe signal EMRS1P. Thesecond, third and fourth address signals A[10], A[11]_2, A[12] areaddress signals of a second mode register that provides the second modesetting strobe signal EMRS5P.

The first control signal generation unit 220 includes a first modedetermination unit 221 and a first mode selection unit 222. The firstmode determination unit 221 receives a first I/O option signal MOD1 andthe first mode signal TDQS as inputs. If the first I/O option signalMOD1 is low and the first mode signal TDQS is low, the first modedetermination unit 221 responsively generates a high first modedetermination signal MOD1_DEC. The first mode selection unit 222receives the first mode determination signal MOD1_DEC as an input andgenerates an inverse of the received first mode determination signalMOD1_DEC as the first control signal enable signal TDQS_EN. When thefirst I/O option signal MOD1 indicates that the semiconductor memorydevice in the X8 I/O option mode the first mode signal TDQS is enabledand the TDQS control function is supported.

The second control signal generation unit 230 includes a second modedetermination unit 231 and a second mode selection unit 232. The secondmode determination unit 231 receives a second I/O option signal MOD2 asan input and generates an inverse of the second I/O option signal MOD2as a second mode determination signal MOD2_DEC. The second modeselection unit 232 receives the first mode determination signalMOD1_DEC, the second mode determination signal MOD2_DEC, and the secondmode signal WDM as inputs. If the first mode determination signalMOD1_DEC, the second mode determination signal MOD2_DEC, and the secondmode signal WDM are all high, the second mode selection unit 232responsively generates a high second control signal enable signalWDM_EN. When the second I/O option signal MOD2 indicates that thesemiconductor memory device is in the X4 I/O option mode and is enabled,the second control signal enable signal WDM_EN cannot be enabled.

The second control signal generation unit 230 includes a third modedetermination unit 233 and a third mode selection unit 234. The thirdmode determination unit 233 receives the second I/O option signal MOD2and the second control signal enable signal WDM_EN as inputs andresponsively generates the third mode determination signal MOD3_DEC asan output. When the second I/O option signal MOD2 indicates that thesemiconductor memory device is in the X4 I/O option mode and is enabled,the third mode determination unit 233 generates a low third modedetermination signal MOD3_DEC as an output because the second controlsignal enable signal WDM_EN is disabled. When the second I/O optionsignal MOD2 indicates that the semiconductor memory device is in the X4I/O option mode and is disabled, the state of the third modedetermination signal MOD3_DEC generated by the third mode determinationunit 233 is determined by the state of the second control signal enablesignal WDM_EN. In such a case, the activation of the WDBI controlfunction is based on the state of the second control signal enablesignal WDM_EN.

The third mode selection unit 234 receives the first mode determinationsignal MOD1_DEC, the third mode determination signal MOD3_DEC, and thethird mode signal WDBI as inputs and responsively generates the thirdcontrol signal enable signal WDBI_EN. When the first mode determinationsignal MOD1_DEC, the third mode determination signal MOD3_DEC, and thethird mode signal WDBI are all high, the third mode selection unit 234responsively generates a high or enabled third control signal enablesignal WDBI_EN. When the first I/O option signal MOD1 indicates that thesemiconductor memory device is in the X8 I/O option mode, the WDBIcontrol function cannot be activated when the TDQS control function isactivated. Furthermore, when the second I/O option signal MOD2 indicatesthat the semiconductor device is in the X4 I/O option mode, the thirdcontrol signal enable signal WDBI_EN may be disabled.

The second control signal generation unit 230 includes a fourth modeselection unit 235. The fourth mode selection unit 235 receives thefirst mode determination signal MOD1_DEC, the second mode determinationsignal MOD2_DEC, and the fourth mode signal RDBI as inputs and generatesa fourth control signal enable signal RDBI_EN as an output. When thefirst mode determination signal MOD1_DEC, the second mode determinationsignal MOD2_DEC, and the fourth mode signal RDBI are all high, thefourth mode selection unit 235 responsively generates an enabled fourthcontrol signal enable signal RDBI_EN. When the first I/O option signalMOD1 indicates that the semiconductor memory device is in the X8 I/Ooption mode, the activation of the RDBI control function depends onwhether or not the TDQS control function has been activated. When thesecond I/O option signal MOD2 indicates that the semiconductor is in theX4 I/O option mode, the RDBI control function is disabled.

As described above, the I/O control circuit can activate only those I/Ocontrol functions that can be supported by a specific I/O option modeusing the I/O option mode signal as a control signal. I/O controlfunctions that are not supported by a particular I/O option mode can beprevented from inadvertently operating in the semiconductor memorydevice. Preventing the inadvertent operation of an I/O control functionthat is not supported by a particular I/O option mode may reduce currentconsumption.

FIG. 3 shows the construction of an embodiment of a semiconductor memorydevice.

The semiconductor memory device 300 of FIG. 3 may include a mode controlunit 310, a pad unit 320, an input driving unit 330, an output drivingunit 340, an I/O conversion unit 350, and a memory region 360.

The mode control unit 310 receives the first control signal enablesignal TDQS_EN, the second control signal enable signal WDM_EN, thethird control signal enable signal WDBI_EN, the fourth control signalenable signal RDBI_EN and a buffer enable signal BUF_EN as inputs. Thefirst control signal enable signal TDQS_EN, the second control signalenable signal WDM_EN, the third control signal enable signal WDBI_EN,and the fourth control signal enable signal RDBI_EN may be generated,for example, by the I/O control circuit shown in FIG. 1 or by the I/Ocontrol circuit shown in FIG. 2.

The mode control unit 310 may include, for example, a first mode controlcircuit 311 and a second mode control circuit 312. Examples of the firstmode control circuit 311 and the second mode control circuit 312 areshown in FIG. 4 and FIG. 5, respectively.

FIG. 4 is a diagram of an example of the first mode control circuit 311shown in FIG. 3. The first mode control circuit 311 may include a firstlogic element 3111. The first logic element 3111 receives the firstcontrol signal enable signal TDQS_EN and the fourth control signalenable signal WDBI_EN as inputs. When both the first control signalenable signal TDQS_EN and the fourth control signal enable signalWDBI_EN are low, the first logic element 3111 generates a deactivatingoutput signal.

FIG. 5 is a diagram of an example of the second mode control circuit 312shown in FIG. 3.

The second mode control circuit 312 may include a second logic element3121. The second logic element 3121 receives the second control signalenable signal WDM_EN and the third control signal enable signal WDBI_ENas inputs. When both the second control signal enable signal WDM_EN andthe third control signal enable signal WDBI_EN are low, the second logicelement 3121 generates a deactivating output signal. The second modecontrol circuit 312 may include a third logic element 3122. The thirdlogic element 3122 receives the output signal of the second logicelement 3121 and the buffer enable signal BUF_EN as inputs. When boththe output signal of the second logic element 3121 and the buffer enablesignal BUF_EN are high, the third logic element 3122 generates anactivating output signal.

The first mode control circuit 311 generates an enabled output signalwhen at least one of the TDQS control function and the RDBI controlfunction is activated. The second mode control circuit 312 generates anenabled output signal when the buffer enable signal BUF_EN is enabledand at least one of the WDM control function and the WDBI controlfunction has been activated.

Referring back to FIG. 3, the pad unit 320 may include an I/O modecontrol pad 321, a data I/O pad 322, and data I/O strobe pads 323, 324.A TDQS signal TDQS for a TDQS control function, a data masking signalDM_n, or a DBI signal DBI_n is received at the I/O mode control pad 321.Write data DQ[m:0] is provided to the data I/O pad 322 by an externaldevice or read data DQ[m:0] is provided by the memory region 360 to thedata I/O pad 322. Strobe signals DQS_t and DQS_b for the synchronizationof data I/O operations are provided to the data I/O strobe pads 323,324.

The input driving unit 330 may include a first buffer 331, a secondbuffer 332, and a third buffer 333.

The first buffer 331 is configured to be driven in response to an outputsignal of the second mode control circuit 312 and to forward to the I/Oconversion unit 350 the signal applied to the I/O mode control pad 321in response to a pad reference signal VREFDQ. In other words, when theWDM control function or the WDBI control function is activated, thefirst buffer 331 supplies the I/O conversion unit 350 with the datamasking signal DM_n or the DBI signal DBI_n, such that a data writeoperation is performed in accordance with either the data masking signalDM_n or the DBI signal DBI_n.

The second buffer 332 is configured to be driven in response to a bufferenable signal BUF_EN and to forward to the I/O conversion unit 350 datareceived via the data I/O pad 322 in response to the pad referencesignal VREFDQ.

The third buffer 333 is configured to be driven in response to thebuffer enable signal BUF_EN and to forward to the I/O conversion unit350 the strobe signals DQS_t, DQS_b received via the data I/O strobepads 323, 324.

The output driving unit 340 may include a fourth buffer 341 and a fifthbuffer 340.

The fourth buffer 341 may be configured to be driven in response to anoutput signal of the first mode control circuit 311 and to forward tothe I/O mode control pad 321 read control data received from the I/Oconversion unit 350. For example, the read control data may be data usedto restore data when an RDBI control function is performed.

The fifth buffer 342 receives read data from the I/O conversion unit 350and forwards the received read data to the data I/O pad 322.

The I/O conversion unit 350 may include a DBI control unit 351, a firstinput conversion unit 352, a second input conversion unit 353, a firstoutput conversion unit 354, and a second output conversion unit 355.

The DBI control unit 351 performs data conversion when a write or readoperation is performed in DBI mode.

The first input conversion unit 352 receives the write data received atthe data I/O pad 322 and the strobe signals received at the data I/Ostrobe pads 323, 324 via the input driving unit 330. The first inputconversion unit 352 supplies the received write data and strobe signalsto the memory region 360 via first global I/O lines GIO[n:0]. The secondinput conversion unit 353 receives the signals received at the I/O modecontrol pad 321 and the strobe signals received at the data I/O strobepads 323, 324 via the input driving unit 330 and forwards the receivedsignals and the strobe signals to the memory region 360 via secondglobal I/O lines DGIO[m:0]. When the WDM control function or the WDBIcontrol function is activated, the write data may be subject to maskingprocessing or inversion processing, synchronized with the strobesignals, and stored in memory cells within the memory region 360.

When the WDBI control function is activated, the write data may beconverted by the DBI control unit 351 and provided to the memory region360 via the first global I/O lines GIO[n:0].

The first output conversion unit 354 receives data read from the memoryregion 360 via the first global I/O lines GIO[n:0] and provides thereceived data to the data I/O pad 322 via the output driving unit 340.When the RDBI control function is activated, the second outputconversion unit 355 provides read data to the DBI control unit 351 forconversion in response to a fourth control signal enable signal RDBI_EN.Furthermore, when the RDBI control function is performed, the secondoutput conversion unit 355 may provide read control data used to restorethe RDBI control function to the I/O mode control pad 321 via the outputdriving unit 340.

In an embodiment, the first and the second input conversion units 352and 353 may convert serial input data into parallel data and provide theparallel data to the memory region 360. In such a case, the first andthe second output conversion units 354, 355 may convert parallel datareceived from the memory region 360 into serial data and provide theserial data to the output driving unit 340.

The I/O control circuit of FIG. 1 or FIG. 2 can generate the firstcontrol signal enable signal TDQS_EN, the second control signal enablesignal WDM_EN, the third control signal enable signal WDBI_EN and thefourth control signal enable signal RDBI_EN in accordance with an I/Ooption mode. Furthermore, a relatively more precise operation can beperformed in each I/O option mode because the mode control unit 310 ofFIG. 3 controls the input driving unit 330 and the output driving unit340.

FIG. 6 shows the construction of an embodiment of a semiconductor memorydevice.

The semiconductor memory device 400 of FIG. 6 may include a first modecontrol unit 410, a pad unit 420, an input driving unit 430, an outputdriving unit 440, an I/O conversion unit 450, a memory region 460, asecond mode control unit 470, and a third mode control unit 480. In thesemiconductor memory device 400 in FIG. 6, the pad unit 420, the inputdriving unit 430, the output driving unit 440, the I/O conversion unit450, and the memory region 460 have substantially the same constructionas the pad unit 320, the input driving unit 330, the output driving unit340, the I/O conversion unit 350, and the memory region 360 describedwith respect to the semiconductor memory device 300 shown in FIG. 3.Accordingly, only the first mode control unit 410, the second modecontrol unit 470 and the third mode control unit 480 are describedbelow.

An embodiment of the first mode control unit 410 receives a first I/Ooption signal MOD1, a second I/O option signal MOD2, the first controlsignal enable signal TDQS_EN, the second control signal enable signalWDM_EN, the third control signal enable signal WDBI_EN, the fourthcontrol signal enable signal RDBI_EN and the buffer enable signalBUF_EN. The first, second, third and fourth control signal enablesignals TDQS_EN, WDM_EN, WDBI_EN, RDBI_EN may be generated by the I/Ocontrol circuit shown, for example, in FIG. 1 or FIG. 2.

The first mode control unit 410 includes a first mode control circuit411 and a second mode control circuit 412. A diagram of an example ofthe first mode control circuit 411 is shown in FIG. 7, and a diagram ofan example of the second mode control circuit 412 is shown in FIG. 8.

The first mode control circuit 411 is configured to activate anassociated output signal based on the activation state of the fourthcontrol signal enable signal RDBI_EN when the second I/O option signalMOD2 is disabled and to activate the associated output signal based onthe activation state of the first control signal enable signal TDQS_ENwhen the first I/O option signal MOD2 is enabled.

The second mode control circuit 412 configured to activate an associatedoutput signal when the second I/O option signal MOD2 is disabled if oneof the second control signal enable signal WDM_EN and the third controlsignal enable signal WDBI_EN is activated and the buffer enable signalBUF_EN is activated.

As shown in FIG. 7, the first mode control circuit 411 may include afirst logic element 4111, a second logic element 4112 and a third logicelement 4113. The first logic element 4111 receives an inverted secondI/O option signal MOD2 and the fourth control signal enable signalRDBI_EN as inputs. When both the inverted second I/O option signal MOD2and the fourth control signal enable signal RDBI_EN are high, the firstlogic element 4111 generates a high output signal. The second logicelement 4112 receives the first I/O option signal MOD1 and the firstcontrol signal enable signal TDQS_EN as inputs. When both the first I/Ooption signal MOD1 and the first control signal enable signal TDQS_ENare high, the second logic element 4112 generates a high output signal.The third logic element 4113 receives the output signals of the firstlogic element 4111 and the second logic element 4112 as inputs. When theoutput signals received from the first logic element 4111 and the secondlogic element 4112 are both low, the third logic element 4113responsively generates a deactivating output signal.

The first logic element 4111 supports the RDBI control function when anI/O option mode is not the X4 I/O option mode. The second logic element4112 supports the TDQS control function only when an I/O option mode isthe X8 I/O option mode. Accordingly, the third logic element 4113enables the output signal when the TDQS control function is activated ifan I/O option mode is the X8 I/O option mode and when the RDBI controlfunction is activated if an I/O option mode is not the X4 I/O optionmode.

As shown in FIG. 8, the second mode control circuit 412 may include afourth logic element 4121 and a fifth logic element 4123. The fourthlogic element 4121 receives the second control signal enable signalWDM_EN, the third control signal enable signal WDBI_EN, and the bufferenable signal BUF_EN as inputs. When at least one of the second controlsignal enable signal WDM_EN, the third control signal enable signalWDBI_EN, and the buffer enable signal BUF_EN is high, the fourth logicelement 4121 responsively generates a low output signal. The fifth logicelement 4122 receives the output signal from the fourth logic element4121 and the second I/O option signal MOD2 as inputs. When both theoutput signal and the second I/O option signal MOD2 are low, the fifthlogic element 4122 responsively generates a high output signal.

The fourth logic element 4121 outputs a low output signal when thebuffer enable signal BUF_EN is enabled and at least one of the WDMcontrol function and the WDBI control function has been activated. Thefifth logic element 4122 generates an enabled output signal when atleast one of the WDM control function and the WDBI control function isactivated and the I/O option mode is not the X4 I/O option mode.

Referring back to FIG. 6, the second mode control unit is configured toactivate the fourth control signal enable signal RDBI_EN when the secondI/O option signal MOD2 is disabled and provide the activated fourthcontrol signal enable signal RDBI_EN to the I/O conversion unit 450. Thesecond mode control unit 470 may include a sixth logic element 4701. Thesix logic element 4701 receives an inverted second I/O option signalMOD2 and the fourth control signal enable signal RDBI_EN as inputs. Whenboth the inverted second I/O option signal MOD2 and the fourth controlsignal enable signal RDBI_EN are high, the sixth logic elementresponsively generates an activating output signal. In other words, thesecond mode control unit 470 generates an activated fourth controlsignal enable signal RDBI_EN if an I/O option mode is not the X4 I/Ooption mode.

The third mode control unit 480 is configured to provide the memoryregion 460 with data from the I/O conversion unit 450 when the secondI/O option signal MOD2 is disabled. The third mode control unit 480 mayinclude a seventh logic element 4801. The seventh logic element 4801receives the second I/O option signal MOD2 and a signal applied to thesecond global I/O lines DGIO[m:0] as inputs. When at least one of thesecond I/O option signal MOD2 and the signal applied to the secondglobal I/O lines DGIO[m:0] is high, the seventh logic element 4801responsively generates an activating output signal. If an I/O optionmode is not the X4 I/O option mode, the third mode control unit 480 maytreat the signal applied to the second global I/O lines DGIO[m:0] asbeing valid.

An embodiment of the semiconductor memory device 400 can be controlledin response to the first, second, third, and fourth control signalenable signals TDQS_EN, WDM_EN, WDBI_EN, RDBI_EN generated using thefirst I/O option signal MOD1 and the second I/O option signal MOD2.Furthermore, the input driving unit 430, the output driving unit 440,the second input conversion unit 454, and the second output conversionunit 455 can be controlled using the first I/O option signal MOD1 andthe second I/O option signal MOD2. Accordingly, an I/O control operationmay be performed in a relatively more precise manner because an I/Ooption mode for the semiconductor memory device 400 is set.

Referring to FIG. 9, a block diagram representation of a system 1000including an embodiment of a semiconductor memory device 1350 and anembodiment of an I/O control circuit is shown. The system 1000 includesone or more semiconductor memory devices 1350 and a memory controller1200. In an embodiment, the I/O control circuit is disposed in a memorycontroller 1200. In an embodiment, the I/O control circuit is disposedin a semiconductor memory device 1350.

Examples of the semiconductor memory device 1350 include, but are notlimited to, dynamic random access memory, static random access memory,synchronous dynamic random access memory (SDRAM), synchronous graphicsrandom access memory (SGRAM), double data rate dynamic ram (DDR), anddouble data rate SDRAM.

The memory controller 1200 is used in the design of memory devices,processors, and computer systems. The system 1000 may include one ormore processors or central processing units (“CPUs”) 1100. The CPU 1100may be used individually or in combination with other CPUs. While theCPU 1100 will be referred to primarily in the singular, it will beunderstood by those skilled in the art that a system with any number ofphysical or logical CPUs may be implemented

A chipset 1150 may be electrically coupled to the CPU 1100. The chipset1150 is a communication pathway for signals between the CPU 1100 andother components of the system 1000, which may include the memorycontroller 1200, an input/output (“I/O”) bus 1250, and a disk drivecontroller 1300. Depending on the configuration of the system 1000, anyone of a number of different signals may be transmitted through thechipset 1150, and those skilled in the art will appreciate that therouting of the signals throughout the system 1000 can be readilyadjusted without changing the underlying nature of the system.

As stated above, the memory controller 1200 may be electrically coupledto the chipset 1150. The memory controller 1200 can receive a requestprovided from the CPU 1100, through the chipset 1150. In alternateembodiments, the memory controller 1200 may be integrated into thechipset 1150. The memory controller 1200 may be electrically coupled toone or more memory devices 1350. The memory devices 1350 may be any oneof a number of industry standard memory types, including but not limitedto, single inline memory modules (“SIMMs”) and dual inline memorymodules (“DIMMs”). Further, the memory devices 1350 may facilitate thesafe removal of the external data storage devices by storing bothinstructions and data.

The chipset 1150 may be electrically coupled to the I/O bus 1250. TheI/O bus 1250 may serve as a communication pathway for signals from thechipset 1150 to I/O devices 1410, 1420 and 1430. The I/O devices 1410,1420 and 1430 may include a mouse 1410, a video display 1420, or akeyboard 1430. The I/O bus 1250 may employ any one of a number ofcommunications protocols to communicate with the I/O devices 1410, 1420,1430. Further, the I/O bus 1250 may be integrated into the chipset 1150.

The disk drive controller 1450 may also be electrically coupled to thechipset 1150. The disk drive controller 1450 may serve as thecommunication pathway between the chipset 1150 and one or more internaldisk drives 1450. The internal disk drive 1450 may facilitatedisconnection of the external data storage devices by storing bothinstructions and data. The disk drive controller 1300 and the internaldisk drives 1450 may communicate with each other or with the chipset1150 using any type of communication protocol, including all of thosementioned above with regard to the I/O bus 1250.

The system 1000 described above in relation to FIG. 9 is merely oneexample of a system employing a semiconductor memory device 1350 and I/Ocontrol circuit. In alternate embodiments, such as cellular phones ordigital cameras, the components may differ from the embodiment shown inFIG. 9.

While certain embodiments have been described above, it will beunderstood to those skilled in the art that the embodiments describedare by way of example only. Accordingly, the semiconductor memory deviceand the I/O control circuit described herein should not be limited basedon the described embodiments. Rather, the device described herein shouldonly be limited in light of the claims that follow when taken inconjunction with the above description and accompanying drawings.

What is claimed is:
 1. A semiconductor memory device, comprising: a modecontrol unit configured to generate an output signal in response to afirst control signal enable signal, a second control signal enablesignal, a third control signal enable signal, a fourth control signalenable signal, and a buffer enable signal received from an I/O controlcircuit; a pad unit comprising an I/O mode control pad, a data I/O pad,and a data I/O strobe pad; an input driving unit configured to be drivenin response to the output signal of the mode control unit andelectrically coupled to the pad unit; an output driving unit configuredto be driven in response to the output signal of the mode control unitand electrically coupled to the pad unit; and an I/O conversion unitconfigured to provide a memory region with data received from the inputdriving unit and to provide the output driving unit with data receivedfrom the memory region in response to the fourth control signal enablesignal.
 2. The semiconductor memory device of claim 1, wherein the I/Ocontrol circuit comprises: a mode setting unit configured to generate afirst mode signal, a second mode signal, a third mode signal, and afourth mode signal in accordance with one of a plurality of I/O optionmodes; a first control signal generation unit configured to generate afirst mode determination signal and a first control signal enable signalin response to the first I/O option signal and the first mode signal;and a second control signal generation unit configured to generate asecond control signal enable signal, a third control signal enablesignal, and a fourth control signal enable signal in response to asecond I/O option signal, the first mode determination signal, thesecond mode signal, the third mode signal, and the fourth mode signal.3. The semiconductor memory device of claim 2, wherein: the firstcontrol signal enable signal is a termination data strobe (TDQS) signalenable signal, the second control signal enable signal is a data mask(WDM) signal enable signal, the third control signal enable signal is adata bus inversion (WDBI) signal enable signal in write mode, and thefourth control signal enable signal is a data bus inversion (RDBI)signal enable signal in read mode.
 4. The semiconductor memory device ofclaim 1, wherein the mode control unit comprises: a first mode controlcircuit configured to activate an associated output signal when one ofthe first control signal enable signal and the fourth control signalenable signal is activated; and a second mode control circuit configuredto activate an associated output signal when one of the second controlsignal enable signal and the third control signal enable signal isactivated and when the buffer enable signal is activated.
 5. Thesemiconductor memory device of claim 1, wherein the I/O mode control padreceives one of a termination data strobe (TDQS) signal, a data maskingsignal, and a data bus inversion (DBI) signal.
 6. A semiconductor memorydevice, comprising: a first mode control unit configured to generate anoutput signal in response to a first control signal enable signal, asecond control signal enable signal, a third control signal enablesignal, a fourth control signal enable signal, a buffer enable signal, afirst I/O option signal, and a second I/O option signal received from anI/O control circuit; a pad unit comprising an I/O mode control pad, adata I/O pad, and a data I/O strobe pad; an input driving unitconfigured to be driven in response to the output signal of the firstmode control unit and electrically coupled to the pad unit; an outputdriving unit configured to be driven in response to the output signal ofthe first mode control unit and electrically coupled to the pad unit;and an I/O conversion unit configured to provide a memory region withdata received from the input driving unit and to provide the outputdriving unit with data received from the memory region in response to afourth control signal enable signal.
 7. The semiconductor memory deviceof claim 6, wherein the I/O control circuit comprises: a mode settingunit configured to generate a first mode signal, a second mode signal, athird mode signal, and a fourth mode signal in accordance with one of aplurality of I/O option modes; a first control signal generation unitconfigured to generate a first mode determination signal and a firstcontrol signal enable signal in response to the first I/O option signaland the first mode signal; and a second control signal generation unitconfigured to generate a second control signal enable signal, a thirdcontrol signal enable signal, and a fourth control signal enable signalin response to a second I/O option signal, the first mode determinationsignal, the second mode signal, the third mode signal, and the fourthmode signal.
 8. The semiconductor memory device of claim 7, wherein thefirst I/O option signal and the second I/O option signal determine anI/O option mode associated with a data I/O bandwidth.
 9. Thesemiconductor memory device of claim 7, wherein: the first controlsignal enable signal is a termination data strobe (TDQS) signal enablesignal, the second control signal enable signal is a data mask (WDM)signal enable signal, the third control signal enable signal is a databus inversion (WDBI) signal enable signal in write mode, and the fourthcontrol signal enable signal is a data bus inversion (RDBI) signalenable signal in read mode.
 10. The semiconductor memory device of claim6, wherein the first mode control unit comprises: a first mode controlcircuit configured to activate an associated output signal based on theactivation state of the fourth control signal enable signal when thesecond I/O option signal is disabled and to activate the associatedoutput signal based on the activation state of the first control signalenable signal when the first I/O option signal is enabled; and a secondmode control circuit configured to activate an associated output signalwhen the second I/O option signal is disabled if one of the secondcontrol signal enable signal and the third control signal enable signalis activated and the buffer enable signal is activated.
 11. Thesemiconductor memory device of claim 6, further comprising a second modecontrol unit configured to activate the fourth control signal enablesignal when the second I/O option signal is disabled and provide theactivated fourth control signal enable signal to the I/O conversionunit.